Micron’s HBM3E Memory Boosts Capacities Up To 36 GB With 12-Hi Design, 9.2 Gbps Speeds, 1.2 TB/s Bandwidth

Hassan Mujtaba Comments
Micron's HBM3E Memory Boosts Capacities Up To 36 GB With 12-Hi Design, 9.2 Gbps Speeds, 1.2 TB/s Bandwidth 1

Micron has started sampling its "production-ready" HBM3E memory solution which features up to 36 GB capacities in a 12-Hi design.

Micron's 12-Hi HBM3E Memory Is Production Ready & Sampling With 36 GB Capacities To Partners Such As NVIDIA

Press Release: Micron is at the forefront of memory innovation to meet these needs and is now shipping production-capable HBM3E 12-high to key industry partners for qualification across the AI ecosystem.

Related Story Micron Introduces 12-High HBM3E And LPDDR5X-Based SOCAMM For NVIDIA’s High Performance Chips

Micron's industry-leading HBM3E 12-high 36GB delivers significantly lower power consumption than our competitors’ 8-high 24GB offerings, despite having 50% more DRAM capacity in the package

Micron HBM3E 12-high boasts an impressive 36GB capacity, a 50% increase over current HBM3E 8-high offerings, allowing larger AI models like Llama 2 with 70 billion parameters to run on a single processor. This capacity increase allows faster time to insight by avoiding CPU offload and GPU-GPU communication delays.

Micron HBM3E 12-high 36GB delivers significantly lower power consumption than the competitors’ HBM3E 8-high 24GB solutions. Micron HBM3E 12-high 36GB offers more than 1.2 terabytes per second (TB/s) of memory bandwidth at a pin speed greater than 9.2 gigabits per second (Gb/s). These combined advantages of  HBM3E offer maximum throughput with the lowest power consumption and can ensure optimal outcomes for power-hungry data centers.

Additionally, Micron HBM3E 12-high incorporates fully programmable MBIST that can run system representative traffic at full spec speed, providing improved test coverage for expedited validation enabling faster time to market, and enhancing system reliability.

Robust ecosystem support

Micron is now shipping production-capable HBM3E 12-high units to key industry partners for qualification across the AI ecosystem. This HBM3E 12-high milestone demonstrates Micron’s innovations to meet the data-intensive demands of the evolving AI infrastructure.

Micron is also a proud partner in TSMC’s 3DFabric Alliance, which helps shape the future of semiconductor and system innovations. AI system manufacturing is complex, and HBM3E integration requires close collaboration between memory suppliers, customers, and outsourced semiconductor assembly and test (OSAT) players.

In summary, here are the Micron HBM3E 12-high 36GB highlights:

  • Undergoing multiple customer qualifications: Micron is shipping production-capable 12-high units to key industry partners to enable qualifications across the AI ecosystem.
  • Seamless scalability: With 36GB of capacity (a 50% increase in capacity over current HBM3E offerings), HBM3E 12-high allows data centers to scale their increasing AI workloads seamlessly.
  • Exceptional efficiency: Micron HBM3E 12-high 36GB delivers significantly lower power consumption than the competitive HBM3E 8-high 24GB solution!
  • Superior performance: With pin speed greater than 9.2 gigabits per second (Gb/s), HBM3E 12-high 36GB delivers more than 1.2 TB/s of memory bandwidth, enabling lightning-fast data access for AI accelerators, supercomputers, and data centers.
  • Expedited validation: Fully programmable MBIST capabilities can run at speeds representative of system traffic, providing improved test coverage for expedited validation, enabling faster time to market, and enhancing system reliability.

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